Nambissan, P. M. G.Bhagwat, P. V.Kurup, M. B.2010-01-062010-01-062007http://hdl.handle.net/123456789/15634156 bytestext/htmlenisochronal annealing behaviorboron ion irradiationboron-doped siliconpositron annihilation experimentsThermal evolution of boron irradiation induced defects in predoped Si revealed by positron annihilation experimentsArticle