Meenakshi, S.Vijayakumar, V.Eifler, A.Hochheimer, H. D.2010-09-282010-09-282010Journal of Physics and Chemistry of Solids. Vol. 71 (5): pp. 832-835http://hdl.handle.net/123456789/39273821 bytestext/htmlenX-ray diffractionHigh PressureSemiconductorsOptical materialsPressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4Article