Increasing peak detectivity (D*) of In0.5Ga0.5As/GaAs quantum dot infrared photodetectors by up to two orders with high-energy proton implantation

Upadhyay, S.Mandal, A.Ghadi, H.Pal, D.Basu, A.Subrahmanyam, N. B. V.Singh, P.Chakrabarti, S.2016-08-092016-08-092016Electronics Letters, 2016. Vol. 52 (1): pp. 61-63http://hdl.handle.net/123456789/133044106 bytestext/htmlenIncreasing peak detectivityIn0.5Ga0.5As/GaAs quantum dot infrared photodetectorshigh-energy proton implantationQDIPsdark current densityIncreasing peak detectivity (D*) of In0.5Ga0.5As/GaAs quantum dot infrared photodetectors by up to two orders with high-energy proton implantationArticle