Laha, P.Banerjee, I.Bajaj, A.Chakraborty, P.Barhai, P. K.Dahiwale, S. S.Das, A. K.Bhoraskar, V. N.Kim, D.Mahapatra, S. K.2013-03-132013-03-132012Radiation Physics & Chemistry, 2012. Vol. 81 (10): pp. 1600-1605http://hdl.handle.net/123456789/70355000 bytestext/htmlenMOS deviceElectron irradiationInterface trapdensityFlat bandvoltageLeakage currentAl2O3Irradiation effects of 6MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitorsArticle