Band gap and defect engineering of bismuth vanadate using La, Ce, Zr dopants to obtain a photoelectrochemical system for ultra-sensitive detection of glucose in blood serum

Prakash, J.Nechiyil, D.Ali, K.Sharma, S. K.Dey, A.Uppal, S.Arya, A.2023-11-282023-11-282023Dalton Transactions, 2023. Vol. 52: pp. 1989-2001http://hdl.handle.net/123456789/261605079 bytestext/htmlenBand gap and defect engineeringbismuth vanadateLa, Ce, Zr dopantsphotoelectrochemical systemultra-sensitive detectionglucose in blood serumBand gap and defect engineering of bismuth vanadate using La, Ce, Zr dopants to obtain a photoelectrochemical system for ultra-sensitive detection of glucose in blood serumArticle