Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer

Upadhyay, S.Mandal, A.Ghadi, H.Pal, D.Basu, A.Agarwal, A.Subrahmanyam, N. B. V.Singh, P.Chakrabarti, S.2015-11-182015-11-182015Journal of Luminescence, 2015. Vol. 161: pp. 129-134http://hdl.handle.net/123456789/119004451 bytestext/htmlenPL efficiencyInAs/GaAs quantum dotsIon implantationDefect passivationEffects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layerArticle