Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications

Singh, S. D.Nand, M.Ajimsha, R. S.Upadhyay, A.Kamparath, R.Mukherjee, C.Misra, P.Sinha, A. K.Jha, S. N.Ganguli, T.2016-12-222016-12-222016Applied Surface Science, 2016. Vol. 389: pp. 835-839http://hdl.handle.net/123456789/138663963 bytestext/htmlenBand offsetPhotoelectron spectroscopyXRDWide band gap semiconductorsDetermination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applicationsArticle