Pradeep, T. M.Hegde, V. N.Pushpa, N.Bhushan, K. G.2019-08-092019-08-092018Indian Journal of Pure & Applied Physics, 2018. Vol. 56: pp. 646-649http://hdl.handle.net/123456789/190554533 bytestext/htmlenBipolar junction transistorProton irradiationElectron irradiationExcess base currentCurrent gainComparison of 5 MeV proton and 1 MeV electron irradiation on silicon NPN rf power transistorsArticle