The Bonding Configuration in a Partially Relaxed Pseudomorphic Epilayer of SiGe: Evidence of the BC-8 Phase of Silicon

Pandey, M.Ray, S. K.Selvam, P.2010-06-112010-06-112008http://hdl.handle.net/123456789/25574164 bytestext/htmlenbonding configurationpseudomorphic epilayerBC-8 phaseRaman spectroscopic techniquesx-ray diffractionThe Bonding Configuration in a Partially Relaxed Pseudomorphic Epilayer of SiGe: Evidence of the BC-8 Phase of SiliconArticle