High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method

Omprakash, M.Arivanandhan, M.Koyama, T.Aswal, D. K.Bhattacharya, S.2015-10-232015-10-232015Crystal Growth & Design, 2015. Vol. 15 (3): pp. 1380-1388http://hdl.handle.net/123456789/117524814 bytestext/htmlenHigh power factorGa-doped compositionally homogeneous Si0.68Ge0.32 bulk crystalvertical temperature gradient freezing methodhigh EPD regionHigh power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing methodArticle