Dua, A. K.George, V. C.Friedrich, M.Zahn, D. R. T.2021-07-302021-07-302004Diamond and Related Materials, 2004. Vol. 13 (1): pp. 74-84http://hdl.handle.net/123456789/231624495 bytestext/htmlenHFCVDPristine Si single crystal substratedifferent stages of growthEffect of biasPressureSiCConversion of SiC to diamondEffect of deposition parameters on different stages of diamond deposition in HFCVD techniqueArticle