Sorb, Y. A.Rajaji, V.Malavi, P. S.Subbarao, U.Halappa, P.Peter, S. C.Karmakar, S.Narayana, C.2016-09-222016-09-222016Journal of Physics-Condensed Matter, 2016. Vol. 28: pp. 1-7: Article no. 015602http://hdl.handle.net/123456789/133674405 bytestext/htmlenelectronic topological transitionhigh pressureRaman spectroscopyresistivityPressure-induced electronic topological transition in Sb2S3Article