An investigation of 10 MeV electron irradiation on silicon NPN transistors

Pradeep, T. M.Hegde, V. N.Pushpa, N.Bhushan, K. G.Mukesh Kumar2022-07-262022-07-262020AIP Conference Proceedings, 2020. Vol. 2265: Article no. 30482http://hdl.handle.net/123456789/248454451 bytestext/htmlenNPN transistorselectron irradiationgamma irradiationexcess base currentcurrent gainAn investigation of 10 MeV electron irradiation on silicon NPN transistorsArticle