Effect of impinging ion energy on the substrates during deposition of SiOx films by radiofrequency plasma enhanced chemical vapor deposition process

Choudhury, A. J.Barve, S. A.Chutia, J.Kakati, H.Pal, A. R.JagannathMithal, N.Kishore, R.Pandey, M.Patil, D. S.2012-03-092012-03-092011Thin Solid Films, 2011. Vol. 519 (22): pp. 7864-7870http://hdl.handle.net/123456789/58214907 bytestext/htmlenRF plasmaIon energyThin filmsPlasma diagnosticsSilicon oxidePlasma assisted chemical vapor depositionHexamethyldisiloxaneEffect of impinging ion energy on the substrates during deposition of SiOx films by radiofrequency plasma enhanced chemical vapor deposition processArticle