Evaluation of interfacial structure of [111] and [001] oriented epitaxial NiO layers on GaAs substrate by non-destructive techniques

Singh, S. D.Das, A.Swami, M. K.Goutam, U. K.Sharma, R. K.2019-05-232019-05-232019Vacuum, 2019. Vol. 159: pp. 335-340http://hdl.handle.net/123456789/185034180 bytestext/htmlenInterfaceEpitaxyXRDRamanWide band gap semiconductorsEvaluation of interfacial structure of [111] and [001] oriented epitaxial NiO layers on GaAs substrate by non-destructive techniquesArticle