Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications

Singh, K.Chauhan, A.Mathew, M.Meena, S. S.Gupta, N.2019-07-172019-07-172019Applied Physics-A, 2019. Vol. 125: Article no. 24http://hdl.handle.net/123456789/188605224 bytestext/htmlennon-alloyed Ti/Al/Ni/Au low-resistance ohmic contactsion-etched n-type GaNsurface treatmentGaN light-emitting diodes applicationsFormation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applicationsArticle