Laha, P.Banerjee, I.Barhai, P. K.Das, A. K.Bhoraskar, V. N.Mahapatra, S. K.2012-11-162012-11-162012Nuclear Instruments & Methods in Physics Research-B, 2012. Vol. 283: pp. 9-14http://hdl.handle.net/123456789/68214727 bytestext/htmlenPoole–Frenkel coefficientFlat band voltageInterface trap densitySurface charge densityEffects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitorsArticle