Patel, N. N.Sunder, M.Garg, A. B.Poswal, H. K.2018-06-132018-06-132017Physical Review-B, 2017. Vol. 96 (17): pp. 174114.1-174114.9http://hdl.handle.net/123456789/164174795 bytestext/htmlenPressure-induced polymorphismhypervalent CsI3high-pressure synchrotron-based x-ray diffraction studyRaman, and electrical resistance studyArticle