Upadhyay, S.Mandal, A.Subrahmanyam, N. B. V.Singh, P.Shete, P.Tongbram, B.Chakrabarti, S.2016-12-132016-12-132016Journal of Luminescence, 2016. Vol. 171: pp. 27-32http://hdl.handle.net/123456789/137754828 bytestext/htmlenIII–V SemiconductorIon implantationMolecular beam epitaxyPhotoluminescenceSubmonolayer quantum dotsEffects of high-energy proton implantation on the luminescence properties of InAs submonolayer quantum dotsArticle