Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

Laha, P.Panda, A. B.Dahiwale, S.Date, K.Patil, K. R.Barhai, P. K.Das, A. K.Banerjee, I.Mahapatra, S. K.2011-06-212011-06-212010Thin Solid Films. Vol. 519 (5): pp. 1530-1535http://hdl.handle.net/123456789/49315099 bytestext/htmlenLeakage currentDielectric constantPoole–Frenkel emissionSchottky emissionAl2O3TiO2MOS deviceEffect of leakage current and dielectric constant on single and double layer oxides in MOS structureArticle