Laha, P.Panda, A. B.Dahiwale, S.Date, K.Patil, K. R.Barhai, P. K.Das, A. K.Banerjee, I.Mahapatra, S. K.2011-06-212011-06-212010Thin Solid Films. Vol. 519 (5): pp. 1530-1535http://hdl.handle.net/123456789/49315099 bytestext/htmlenLeakage currentDielectric constantPoole–Frenkel emissionSchottky emissionAl2O3TiO2MOS deviceEffect of leakage current and dielectric constant on single and double layer oxides in MOS structureArticle