Nanostructured MoSx-based thin films obtained by electrochemical reduction

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dc.contributor.authorGhosh, S. K.
dc.contributor.authorBera, T.
dc.contributor.authorKaracasu, O.
dc.contributor.authorSwarnakar, A.
dc.contributor.authorBuijnsters, J. G.
dc.contributor.authorCelis, J. P.
dc.date.accessioned2012-09-06T10:06:18Z
dc.date.available2012-09-06T10:06:18Z
dc.date.issued2011
dc.format.extent4487 bytes
dc.format.mimetypetext/html
dc.identifier.sourceElectrochimica Acta, 2011. Vol. 56: pp. 2433-2442en
dc.identifier.urihttp://hdl.handle.net/123456789/6690
dc.language.isoenen
dc.subjectThin filmen
dc.subjectMoS2 nanotubeen
dc.subjectIF-MoS2en
dc.subjectCoefficient of frictionen
dc.subjectElectrochemical depositionen
dc.titleNanostructured MoSx-based thin films obtained by electrochemical reductionen
dc.typeArticleen

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