Growth of homogeneous polycrystalline Si1-xGex and Mg2Si1-xGex for thermoelectric application

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dc.contributor.authorHayakawa, Y.
dc.contributor.authorArivanandhan, M.
dc.contributor.authorSaito, Y.
dc.contributor.authorBhattacharya, S.
dc.contributor.authorAswal, D. K.
dc.date.accessioned2012-04-18T06:05:17Z
dc.date.available2012-04-18T06:05:17Z
dc.date.issued2011
dc.format.extent4437 bytes
dc.format.mimetypetext/html
dc.identifier.sourceThin Solid Films, 2011. Vol. 519 (24): pp. 8532-8537en
dc.identifier.urihttp://hdl.handle.net/123456789/6203
dc.language.isoenen
dc.subjectSilicon Germanium alloysen
dc.subjectMagnesium Silicon Germaniumen
dc.subjectThermoelectric propertyen
dc.subjectGrowth from solutionsen
dc.titleGrowth of homogeneous polycrystalline Si1-xGex and Mg2Si1-xGex for thermoelectric applicationen
dc.typeArticleen

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