Effect of Chemical Pressure at the Boundary of Mott Insulator to Itinerant Electron Limit Transition in Spinel Vanadates

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dc.contributor.authorShahi, P.
dc.contributor.authorA. Kumar
dc.contributor.authorSingh, R.
dc.contributor.authorSingh, R.
dc.contributor.authorSastry, P. U.
dc.contributor.authorDas, A.
dc.date.accessioned2016-01-13T05:41:54Z
dc.date.available2016-01-13T05:41:54Z
dc.date.issued2015
dc.description.divisionSSPDen
dc.format.extent4113 bytes
dc.format.mimetypetext/html
dc.identifier.sourceScience of Advanced Materials, 2015. Vol. 7 (6): pp. 1187-1196en
dc.identifier.urihttp://hdl.handle.net/123456789/12199
dc.language.isoenen
dc.subjectChemical Pressureen
dc.subjectBoundary of Mott Insulatoren
dc.subjectItinerant Electron Limit Transitionen
dc.subjectSpinel Vanadatesen
dc.titleEffect of Chemical Pressure at the Boundary of Mott Insulator to Itinerant Electron Limit Transition in Spinel Vanadatesen
dc.typeArticleen

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