Optoelectronic behaviors and carrier dynamics of individual localized luminescent centers in InGaN quantum-well light emitting diodes

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dc.contributor.authorDe, S.
dc.contributor.authorDas, D. K.
dc.contributor.authorLayek, A.
dc.contributor.authorRaja, A.
dc.contributor.authorSingh, M. K.
dc.contributor.authorBhattacharya, A.
dc.contributor.authorDhar, S.
dc.contributor.authorChowdhury, A.
dc.date.accessioned2012-04-02T09:28:26Z
dc.date.available2012-04-02T09:28:26Z
dc.date.issued2011
dc.format.extent4079 bytes
dc.format.mimetypetext/html
dc.identifier.sourceApplied Physics Letters, 2011. Vol. 99 (25): pp. 251911.1-251911.4en
dc.identifier.urihttp://hdl.handle.net/123456789/6003
dc.language.isoenen
dc.subjectOptoelectronic behaviorsen
dc.subjectcarrier dynamicsen
dc.subjectluminescent centersen
dc.subjectInGaN quantum-well light emitting diodesen
dc.titleOptoelectronic behaviors and carrier dynamics of individual localized luminescent centers in InGaN quantum-well light emitting diodesen
dc.typeArticleen

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