Electronic topological transition in AuX2 (X = In, Ga and Al) compounds at high pressures
dc.contributor.author | Garg, A. B. | |
dc.contributor.author | Godwal, B. K. | |
dc.contributor.author | Meenakshi, S. | |
dc.contributor.author | Modak, P. | |
dc.contributor.author | Rao, R. S. | |
dc.contributor.author | Sikka, S. K. | |
dc.contributor.author | Vijayakumar, V. | |
dc.date.accessioned | 2019-09-30T10:41:30Z | |
dc.date.available | 2019-09-30T10:41:30Z | |
dc.date.issued | 2002 | |
dc.description.division | HPPD | en |
dc.format.extent | 3900 bytes | |
dc.format.mimetype | text/html | |
dc.identifier.source | Journal of Physics Condensed Matter, 2002. Vol. 14 (44 SPEC ISS): pp. 10605-10608 | en |
dc.identifier.uri | http://hdl.handle.net/123456789/19596 | |
dc.language.iso | en | en |
dc.subject | Electronic topological transition | en |
dc.subject | high pressures | en |
dc.subject | accurate x-ray diffraction data | en |
dc.subject | ELETTRA synchrotron source | en |
dc.title | Electronic topological transition in AuX2 (X = In, Ga and Al) compounds at high pressures | en |
dc.type | Article | en |