Electronic topological transition in AuX2 (X = In, Ga and Al) compounds at high pressures

dc.contributor.authorGarg, A. B.
dc.contributor.authorGodwal, B. K.
dc.contributor.authorMeenakshi, S.
dc.contributor.authorModak, P.
dc.contributor.authorRao, R. S.
dc.contributor.authorSikka, S. K.
dc.contributor.authorVijayakumar, V.
dc.date.accessioned2019-09-30T10:41:30Z
dc.date.available2019-09-30T10:41:30Z
dc.date.issued2002
dc.description.divisionHPPDen
dc.format.extent3900 bytes
dc.format.mimetypetext/html
dc.identifier.sourceJournal of Physics Condensed Matter, 2002. Vol. 14 (44 SPEC ISS): pp. 10605-10608en
dc.identifier.urihttp://hdl.handle.net/123456789/19596
dc.language.isoenen
dc.subjectElectronic topological transitionen
dc.subjecthigh pressuresen
dc.subjectaccurate x-ray diffraction dataen
dc.subjectELETTRA synchrotron sourceen
dc.titleElectronic topological transition in AuX2 (X = In, Ga and Al) compounds at high pressuresen
dc.typeArticleen

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