Rigid-band electronic structure of scandium nitride across the n-type to p-type carrier transition regime

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dc.contributor.authorNayak, S.
dc.contributor.authorBaral, M.
dc.contributor.authorGupta, M.
dc.contributor.authorSingh, J.
dc.date.accessioned2019-12-12T11:48:32Z
dc.date.available2019-12-12T11:48:32Z
dc.date.issued2019
dc.description.divisionTPDen
dc.format.extent4623 bytes
dc.format.mimetypetext/html
dc.identifier.sourcePhysical Review-B, 2019. Vol. 99: Article no. 161117en
dc.identifier.urihttp://hdl.handle.net/123456789/20116
dc.language.isoenen
dc.subjectRigid-band electronic structureen
dc.subjectscandium nitrideen
dc.subjectn-type to p-type carrier transition regimeen
dc.subjecttunable electronic and thermoelectric propertyen
dc.titleRigid-band electronic structure of scandium nitride across the n-type to p-type carrier transition regimeen
dc.typeArticleen

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