Intersubband Absorption in Gallium Arsenide Implanted with Silicon Negative Ions

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dc.contributor.authorYadav, A. R.
dc.contributor.authorDubey, S. K.
dc.contributor.authorDubey, R. L.
dc.contributor.authorSubramanyam, N.
dc.date.accessioned2020-12-24T06:04:55Z
dc.date.available2020-12-24T06:04:55Z
dc.date.issued2019
dc.description.divisionBARCen
dc.format.extent5129 bytes
dc.format.mimetypetext/html
dc.identifier.sourceInternational Journal of Nanoscience, 2019. Vol. 19 (1): Article no. 1950019en
dc.identifier.urihttp://hdl.handle.net/123456789/21632
dc.language.isoenen
dc.subjectSilicon negative ion implantationen
dc.subjectSiGaAsen
dc.subjectXPSen
dc.subjectUV-Vis-NIRen
dc.subjectXRDen
dc.titleIntersubband Absorption in Gallium Arsenide Implanted with Silicon Negative Ionsen
dc.typeArticleen

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