Temperature Driven Unusual Reversible p- to n-Type Conduction Switching in Bi2Te2.7Se0.3

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dc.contributor.authorBohra, A. K.
dc.contributor.authorAhmad, S.
dc.contributor.authorBhatt, R.
dc.contributor.authorBhattacharya, S.
dc.contributor.authorBasu, R.
dc.contributor.authorSarkar, P.
dc.contributor.authorMeshram, K. N.
dc.contributor.authorDebnath, A. K.
dc.contributor.authorBhatt, P.
dc.contributor.authorPatro, P. K.
dc.contributor.authorDasgupta, K.
dc.contributor.authorMuthe, K. P.
dc.date.accessioned2020-11-26T04:40:22Z
dc.date.available2020-11-26T04:40:22Z
dc.date.issued2019
dc.description.divisionTPD;ApSD;SSPD;PMD;MMDen
dc.format.extent4210 bytes
dc.format.mimetypetext/html
dc.identifier.sourcePhysica Status Solidi - Rapid Research Letters, 2019. Vol. 13: Article no. 1900121en
dc.identifier.urihttp://hdl.handle.net/123456789/21453
dc.language.isoenen
dc.subjectantisite defectsen
dc.subjectbismuth tellurideen
dc.subjectchalcogenide compoundsen
dc.subjectconduction switchingen
dc.subjectreversible semiconductor switchesen
dc.titleTemperature Driven Unusual Reversible p- to n-Type Conduction Switching in Bi2Te2.7Se0.3en
dc.typeArticleen

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