Thermal evolution of boron irradiation induced defects in predoped Si revealed by positron annihilation experiments

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dc.contributor.authorNambissan, P. M. G.
dc.contributor.authorBhagwat, P. V.
dc.contributor.authorKurup, M. B.
dc.date.accessioned2010-01-06T03:45:32Z
dc.date.available2010-01-06T03:45:32Z
dc.date.issued2007
dc.format.extent4156 bytes
dc.format.mimetypetext/html
dc.identifier.urihttp://hdl.handle.net/123456789/1563
dc.language.isoenen
dc.subjectisochronal annealing behavioren
dc.subjectboron ion irradiationen
dc.subjectboron-doped siliconen
dc.subjectpositron annihilation experimentsen
dc.titleThermal evolution of boron irradiation induced defects in predoped Si revealed by positron annihilation experimentsen
dc.typeArticleen

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