Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4

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dc.contributor.authorMeenakshi, S.
dc.contributor.authorVijayakumar, V.
dc.contributor.authorEifler, A.
dc.contributor.authorHochheimer, H. D.
dc.date.accessioned2010-09-28T08:14:46Z
dc.date.available2010-09-28T08:14:46Z
dc.date.issued2010
dc.format.extent3821 bytes
dc.format.mimetypetext/html
dc.identifier.sourceJournal of Physics and Chemistry of Solids. Vol. 71 (5): pp. 832-835en
dc.identifier.urihttp://hdl.handle.net/123456789/3927
dc.language.isoenen
dc.subjectX-ray diffractionen
dc.subjectHigh Pressureen
dc.subjectSemiconductorsen
dc.subjectOptical materialsen
dc.titlePressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4en
dc.typeArticleen

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