<100> directed growth, Hirshfeld surface analysis, and scintillation properties of trans-Stilbene (TSB) single crystal grown by modified low-temperature vertical Bridgman method

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dc.contributor.authorMurugesan, M.
dc.contributor.authorPaulraj, R.
dc.contributor.authorTyagi, M.
dc.date.accessioned2022-04-26T11:02:32Z
dc.date.available2022-04-26T11:02:32Z
dc.date.issued2021
dc.description.divisionTPDen
dc.format.extent4945 bytes
dc.format.mimetypetext/html
dc.identifier.sourceJournal of Materials Science-Materials in Elecronics, 2021. Vol. 32 (11): pp. 15200-15210en
dc.identifier.urihttp://hdl.handle.net/123456789/24422
dc.language.isoenen
dc.subject<100> directed growthen
dc.subjectHirshfeld surface analysisen
dc.subjectscintillation propertyen
dc.subjecttrans-Stilbene (TSB) single crystal growthen
dc.subjectmodified low-temperature vertical Bridgman methoden
dc.title<100> directed growth, Hirshfeld surface analysis, and scintillation properties of trans-Stilbene (TSB) single crystal grown by modified low-temperature vertical Bridgman methoden
dc.typeArticleen

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