Increasing peak detectivity (D*) of In0.5Ga0.5As/GaAs quantum dot infrared photodetectors by up to two orders with high-energy proton implantation

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dc.contributor.authorUpadhyay, S.
dc.contributor.authorMandal, A.
dc.contributor.authorGhadi, H.
dc.contributor.authorPal, D.
dc.contributor.authorBasu, A.
dc.contributor.authorSubrahmanyam, N. B. V.
dc.contributor.authorSingh, P.
dc.contributor.authorChakrabarti, S.
dc.date.accessioned2016-08-09T09:01:17Z
dc.date.available2016-08-09T09:01:17Z
dc.date.issued2016
dc.description.divisionIADDen
dc.format.extent4106 bytes
dc.format.mimetypetext/html
dc.identifier.sourceElectronics Letters, 2016. Vol. 52 (1): pp. 61-63en
dc.identifier.urihttp://hdl.handle.net/123456789/13304
dc.language.isoenen
dc.subjectIncreasing peak detectivityen
dc.subjectIn0.5Ga0.5As/GaAs quantum dot infrared photodetectorsen
dc.subjecthigh-energy proton implantationen
dc.subjectQDIPsen
dc.subjectdark current densityen
dc.titleIncreasing peak detectivity (D*) of In0.5Ga0.5As/GaAs quantum dot infrared photodetectors by up to two orders with high-energy proton implantationen
dc.typeArticleen

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