Memory and ferroelectric photovoltaic effects arising from quasi-reversible oxidation and reduction in porphyrin entrapped aminopropyl-silicate films

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dc.contributor.authorKoiry, S. P.
dc.contributor.authorJha, P.
dc.contributor.authorPutta, V.
dc.contributor.authorSaxena, V.
dc.contributor.authorChauhan, A. K.
dc.contributor.authorAswal, D. K.
dc.contributor.authorGupta, S. K.
dc.date.accessioned2016-03-09T09:42:14Z
dc.date.available2016-03-09T09:42:14Z
dc.date.issued2015
dc.description.divisionTPDen
dc.format.extent5179 bytes
dc.format.mimetypetext/html
dc.identifier.sourceOrganic Electronics, 2015. Vol. 25: pp. 143-150en
dc.identifier.urihttp://hdl.handle.net/123456789/12611
dc.language.isoenen
dc.subjectRedox switchingen
dc.subjectFerroelectricen
dc.subjectPhotovoltaic effecten
dc.titleMemory and ferroelectric photovoltaic effects arising from quasi-reversible oxidation and reduction in porphyrin entrapped aminopropyl-silicate filmsen
dc.typeArticleen

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