Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer

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dc.contributor.authorUpadhyay, S.
dc.contributor.authorMandal, A.
dc.contributor.authorGhadi, H.
dc.contributor.authorPal, D.
dc.contributor.authorBasu, A.
dc.contributor.authorAgarwal, A.
dc.contributor.authorSubrahmanyam, N. B. V.
dc.contributor.authorSingh, P.
dc.contributor.authorChakrabarti, S.
dc.date.accessioned2015-11-18T05:49:00Z
dc.date.available2015-11-18T05:49:00Z
dc.date.issued2015
dc.description.divisionIADDen
dc.format.extent4451 bytes
dc.format.mimetypetext/html
dc.identifier.sourceJournal of Luminescence, 2015. Vol. 161: pp. 129-134en
dc.identifier.urihttp://hdl.handle.net/123456789/11900
dc.language.isoenen
dc.subjectPL efficiencyen
dc.subjectInAs/GaAs quantum dotsen
dc.subjectIon implantationen
dc.subjectDefect passivationen
dc.titleEffects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layeren
dc.typeArticleen

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