Engineering ZnO with Cu doping to lower the transition pressure: Experimental and theoretical investigations

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dc.contributor.authorSharma, B. B.
dc.contributor.authorChakraborty, B.
dc.contributor.authorGohil, S.
dc.contributor.authorGarg, N.
dc.date.accessioned2023-11-28T05:13:42Z
dc.date.available2023-11-28T05:13:42Z
dc.date.issued2023
dc.description.divisionHP&SRPDen
dc.format.extent3926 bytes
dc.format.mimetypetext/html
dc.identifier.sourceAIP Advances, 2023. Vol. 13: Article no. 15022en
dc.identifier.urihttp://hdl.handle.net/123456789/26150
dc.language.isoenen
dc.subjectEngineering ZnO with Cu dopingen
dc.subjecttransition pressureen
dc.subjectxperimental and theoretical investigationsen
dc.subjectn-type wide bandgap semiconductoren
dc.titleEngineering ZnO with Cu doping to lower the transition pressure: Experimental and theoretical investigationsen
dc.typeArticleen

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