Junction edge passivation study of silicon surface barrier detectors using organic films deposited by L–B technique

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dc.contributor.authorRay, A.
dc.contributor.authorChoudhury, S.
dc.contributor.authorSingh, V.
dc.contributor.authorBetty, C. A.
dc.contributor.authorRao, T. V. C.
dc.date.accessioned2020-03-16T10:06:37Z
dc.date.available2020-03-16T10:06:37Z
dc.date.issued2019
dc.description.divisionTPD;ChD;MSDen
dc.format.extent4032 bytes
dc.format.mimetypetext/html
dc.identifier.sourceBritish Journal of Radiology, 2019. Vol. 42: Article no. 277en
dc.identifier.urihttp://hdl.handle.net/123456789/20456
dc.language.isoenen
dc.subjectTin oxideen
dc.subjectnanoparticlesen
dc.subjectpassivationen
dc.subjectsurface-barrieren
dc.subjectdetectoren
dc.titleJunction edge passivation study of silicon surface barrier detectors using organic films deposited by L–B techniqueen
dc.typeArticleen

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