Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications

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dc.contributor.authorSingh, S. D.
dc.contributor.authorNand, M.
dc.contributor.authorAjimsha, R. S.
dc.contributor.authorUpadhyay, A.
dc.contributor.authorKamparath, R.
dc.contributor.authorMukherjee, C.
dc.contributor.authorMisra, P.
dc.contributor.authorSinha, A. K.
dc.contributor.authorJha, S. N.
dc.contributor.authorGanguli, T.
dc.date.accessioned2016-12-22T05:27:42Z
dc.date.available2016-12-22T05:27:42Z
dc.date.issued2016
dc.description.divisionBARCen
dc.format.extent3963 bytes
dc.format.mimetypetext/html
dc.identifier.sourceApplied Surface Science, 2016. Vol. 389: pp. 835-839en
dc.identifier.urihttp://hdl.handle.net/123456789/13866
dc.language.isoenen
dc.subjectBand offseten
dc.subjectPhotoelectron spectroscopyen
dc.subjectXRDen
dc.subjectWide band gap semiconductorsen
dc.titleDetermination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applicationsen
dc.typeArticleen

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