Crystallographic phase control of TiO2 in thin films deposited by asymmetric bipolar pulsed DC sputtering

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dc.contributor.authorSagdeo, P. R.
dc.contributor.authorMaidul, S.
dc.contributor.authorShinde, D. D.
dc.contributor.authorMisal, J. S.
dc.contributor.authorThakur, S.
dc.contributor.authorSahoo, N. K.
dc.contributor.authorSagdeo, A.
dc.contributor.authorRai, S.
dc.contributor.authorMukherjee, C.
dc.contributor.authorRajiv, K.
dc.contributor.authorSathe, V. G.
dc.contributor.authorBhattacharyya, D. K.
dc.date.accessioned2012-11-15T08:13:53Z
dc.date.available2012-11-15T08:13:53Z
dc.date.issued2012
dc.description.divisionASDen
dc.format.extent4009 bytes
dc.format.mimetypetext/html
dc.identifier.sourceAIP Conference Proceedings, 2012. Vol. 1451: pp. 121-123en
dc.identifier.urihttp://hdl.handle.net/123456789/6804
dc.language.isoenen
dc.subjectDeposition of TiO2en
dc.subjectPulsed DC sputteringen
dc.subjectOxygen partial pressureen
dc.subjectEnergy transfer during depositionen
dc.titleCrystallographic phase control of TiO2 in thin films deposited by asymmetric bipolar pulsed DC sputteringen
dc.typeArticleen

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