The Bonding Configuration in a Partially Relaxed Pseudomorphic Epilayer of SiGe: Evidence of the BC-8 Phase of Silicon

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dc.contributor.authorPandey, M.
dc.contributor.authorRay, S. K.
dc.contributor.authorSelvam, P.
dc.date.accessioned2010-06-11T05:46:06Z
dc.date.available2010-06-11T05:46:06Z
dc.date.issued2008
dc.format.extent4164 bytes
dc.format.mimetypetext/html
dc.identifier.urihttp://hdl.handle.net/123456789/2557
dc.language.isoenen
dc.subjectbonding configurationen
dc.subjectpseudomorphic epilayeren
dc.subjectBC-8 phaseen
dc.subjectRaman spectroscopic techniquesen
dc.subjectx-ray diffractionen
dc.titleThe Bonding Configuration in a Partially Relaxed Pseudomorphic Epilayer of SiGe: Evidence of the BC-8 Phase of Siliconen
dc.typeArticleen

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