Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions

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dc.contributor.authorUpadhyay, S.
dc.contributor.authorMandal, A.
dc.contributor.authorAgarwal, A.
dc.contributor.authorGhadi, H.
dc.contributor.authorGoma, K. K. C.
dc.contributor.authorBasu, A.
dc.contributor.authorSubrahmanyam, N. B. V.
dc.contributor.authorSingh, P.
dc.contributor.authorChakrabarti, S.
dc.date.accessioned2016-12-22T09:43:37Z
dc.date.available2016-12-22T09:43:37Z
dc.date.issued2016
dc.description.divisionIADDen
dc.format.extent4238 bytes
dc.format.mimetypetext/html
dc.identifier.sourceMaterials Research Bulletin, 2016. Vol. 84: pp. 79-84en
dc.identifier.urihttp://hdl.handle.net/123456789/13872
dc.language.isoenen
dc.subjectNanostructuresen
dc.subjectEpitaxial growthen
dc.subjectOptical propertiesen
dc.subjectTransmission electron microscopy (TEM)en
dc.subjectElectrical propertiesen
dc.titleEnhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ionsen
dc.typeArticleen

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