Comparison of the role of holes and electrons in hysteresis and threshold voltage stability of organic field effect transistors

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dc.contributor.authorPadma, N.
dc.contributor.authorSawant, S. N.
dc.contributor.authorSudarsan, V.
dc.contributor.authorSen, S.
dc.contributor.authorGupta, S. K.
dc.date.accessioned2014-05-26T09:55:58Z
dc.date.available2014-05-26T09:55:58Z
dc.date.issued2013
dc.description.divisionTPD;ChDen
dc.format.extent4748 bytes
dc.format.mimetypetext/html
dc.identifier.sourcePhysica Status Solidi-A, 2013. Vol. 210 (10): pp. 2111-2120en
dc.identifier.urihttp://hdl.handle.net/123456789/9389
dc.language.isoenen
dc.subjectcopper phthalocyanineen
dc.subjecthysteresisen
dc.subjectorganic field effect transistorsen
dc.subjectthreshold voltage stabilityen
dc.titleComparison of the role of holes and electrons in hysteresis and threshold voltage stability of organic field effect transistorsen
dc.typeArticleen

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