An investigation of 10 MeV electron irradiation on silicon NPN transistors

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dc.contributor.authorPradeep, T. M.
dc.contributor.authorHegde, V. N.
dc.contributor.authorPushpa, N.
dc.contributor.authorBhushan, K. G.
dc.contributor.authorMukesh Kumar
dc.date.accessioned2022-07-26T07:12:49Z
dc.date.available2022-07-26T07:12:49Z
dc.date.issued2020
dc.description.divisionTPDen
dc.format.extent4451 bytes
dc.format.mimetypetext/html
dc.identifier.sourceAIP Conference Proceedings, 2020. Vol. 2265: Article no. 30482en
dc.identifier.urihttp://hdl.handle.net/123456789/24845
dc.language.isoenen
dc.subjectNPN transistorsen
dc.subjectelectron irradiationen
dc.subjectgamma irradiationen
dc.subjectexcess base currenten
dc.subjectcurrent gainen
dc.titleAn investigation of 10 MeV electron irradiation on silicon NPN transistorsen
dc.typeArticleen

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