An investigation of 80 MeV nitrogen ion irradiation on silicon NPN transistors

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dc.contributor.authorPradeep, T. M.
dc.contributor.authorVinayakprasanna, N. H.
dc.contributor.authorHemaraju, B. C.
dc.contributor.authorBhushan, K. G.
dc.date.accessioned2020-03-20T10:30:40Z
dc.date.available2020-03-20T10:30:40Z
dc.date.issued2017
dc.description.divisionTPDen
dc.format.extent4034 bytes
dc.format.mimetypetext/html
dc.identifier.sourceAIP Conference Proceedings, 2017. Vol. 1832: Article no. 120004en
dc.identifier.urihttp://hdl.handle.net/123456789/20503
dc.language.isoenen
dc.subjectBipolar Junction Transistorsen
dc.subjectcurrent gainen
dc.subjection irradiationen
dc.titleAn investigation of 80 MeV nitrogen ion irradiation on silicon NPN transistorsen
dc.typeArticleen

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