Evaluation of interfacial structure of [111] and [001] oriented epitaxial NiO layers on GaAs substrate by non-destructive techniques

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dc.contributor.authorSingh, S. D.
dc.contributor.authorDas, A.
dc.contributor.authorSwami, M. K.
dc.contributor.authorGoutam, U. K.
dc.contributor.authorSharma, R. K.
dc.date.accessioned2019-05-23T08:37:57Z
dc.date.available2019-05-23T08:37:57Z
dc.date.issued2019
dc.description.divisionTPDen
dc.format.extent4180 bytes
dc.format.mimetypetext/html
dc.identifier.sourceVacuum, 2019. Vol. 159: pp. 335-340en
dc.identifier.urihttp://hdl.handle.net/123456789/18503
dc.language.isoenen
dc.subjectInterfaceen
dc.subjectEpitaxyen
dc.subjectXRDen
dc.subjectRamanen
dc.subjectWide band gap semiconductorsen
dc.titleEvaluation of interfacial structure of [111] and [001] oriented epitaxial NiO layers on GaAs substrate by non-destructive techniquesen
dc.typeArticleen

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