Highly sensitive NO2 sensor based on ZnO nanostructured thin film prepared by SILAR technique

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dc.contributor.authorGanapathi, S. K.
dc.contributor.authorKaur, M.
dc.contributor.authorShaheera, M.
dc.contributor.authorPathak, A.
dc.contributor.authorGadkari, S. C.
dc.contributor.authorDebnath, A. K.
dc.date.accessioned2022-01-25T10:15:56Z
dc.date.available2022-01-25T10:15:56Z
dc.date.issued2021
dc.description.divisionTPDen
dc.format.extent4724 bytes
dc.format.mimetypetext/html
dc.identifier.sourceSensors and Actuators-B, 2021. Vol. 335: Article no. 129678en
dc.identifier.urihttp://hdl.handle.net/123456789/23894
dc.language.isoenen
dc.subjectThin filmen
dc.subjectSILARen
dc.subjectGas sensingen
dc.subjectChemiresistiveen
dc.subjectNitrogen dioxideen
dc.subjectDefectsen
dc.titleHighly sensitive NO2 sensor based on ZnO nanostructured thin film prepared by SILAR techniqueen
dc.typeArticleen

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