Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications

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dc.contributor.authorArivanandhan, M.
dc.contributor.authorSaito, Y.
dc.contributor.authorKoyama, T.
dc.contributor.authorMomose, Y.
dc.contributor.authorIkeda, H.
dc.contributor.authorTanaka, A.
dc.contributor.authorTatsuoka, T.
dc.contributor.authorAswal, D. K.
dc.contributor.authorInatomi, Y.
dc.contributor.authorHayakawa, Y.
dc.date.accessioned2011-12-07T10:39:17Z
dc.date.available2011-12-07T10:39:17Z
dc.date.issued2011
dc.format.extent4374 bytes
dc.format.mimetypetext/html
dc.identifier.sourceJournal of Crystal Growth, 2011. Vol. 318 (1): pp. 324-327en
dc.identifier.urihttp://hdl.handle.net/123456789/5444
dc.language.isoenen
dc.subjectInterfacesen
dc.subjectSupersaturated solutionsen
dc.subjectGrowth from solutionsen
dc.subjectGermanium silicon alloysen
dc.titleGrowth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applicationsen
dc.typeArticleen

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