Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

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dc.contributor.authorShaheera, M.
dc.contributor.authorGirija, K. G.
dc.contributor.authorKaur, M.
dc.contributor.authorGeetha, V.
dc.contributor.authorDebnath, A. K.
dc.contributor.authorKarri, M.
dc.contributor.authorThota, M. K.
dc.contributor.authorVatsa, R. K.
dc.contributor.authorMuthe, K. P.
dc.contributor.authorGadkari, S. C.
dc.date.accessioned2018-07-17T06:35:31Z
dc.date.available2018-07-17T06:35:31Z
dc.date.issued2018
dc.description.divisionChD;TPD;MMDen
dc.format.extent4521 bytes
dc.format.mimetypetext/html
dc.identifier.sourceAIP Conference Proceedings, 2018. Vol. 1942: pp. 080054.1-080054.4en
dc.identifier.urihttp://hdl.handle.net/123456789/16549
dc.language.isoenen
dc.subjectSynergistic effecten
dc.subjectindium and gallium co-dopingen
dc.subjectRF sputtered ZnO thin filmsen
dc.subjectoptoelectronic applicationsen
dc.subjectRF magnetron sputteringen
dc.titleSynergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin filmsen
dc.typeArticleen

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