Pressure-induced polymorphism in hypervalent CsI3

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dc.contributor.authorPatel, N. N.
dc.contributor.authorSunder, M.
dc.contributor.authorGarg, A. B.
dc.contributor.authorPoswal, H. K.
dc.date.accessioned2018-06-13T08:32:24Z
dc.date.available2018-06-13T08:32:24Z
dc.date.issued2017
dc.description.divisionHP&SRPDen
dc.format.extent4795 bytes
dc.format.mimetypetext/html
dc.identifier.sourcePhysical Review-B, 2017. Vol. 96 (17): pp. 174114.1-174114.9en
dc.identifier.urihttp://hdl.handle.net/123456789/16417
dc.language.isoenen
dc.subjectPressure-induced polymorphismen
dc.subjecthypervalent CsI3en
dc.subjecthigh-pressure synchrotron-based x-ray diffraction studyen
dc.subjectRaman, and electrical resistance studyen
dc.titlePressure-induced polymorphism in hypervalent CsI3en
dc.typeArticleen

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