Achieving tunable doping of MoSe2 based devices using GO@MoSe2 heterostructure

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dc.contributor.authorMaji, T. K.
dc.contributor.authorTiwary, K. K.
dc.contributor.authorKarmakar, D.
dc.date.accessioned2020-09-04T05:38:49Z
dc.date.available2020-09-04T05:38:49Z
dc.date.issued2017
dc.description.divisionTPDen
dc.format.extent3984 bytes
dc.format.mimetypetext/html
dc.identifier.sourceAIP Conference Proceedings, 2017. Vol. 1832: Article no. 120019en
dc.identifier.urihttp://hdl.handle.net/123456789/20520
dc.language.isoenen
dc.subjectMoSe2en
dc.subjectGraphene Oxideen
dc.subjectLiganden
dc.subjectDFTen
dc.titleAchieving tunable doping of MoSe2 based devices using GO@MoSe2 heterostructureen
dc.typeArticleen

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