Studies on reducing leakage current and improving breakdown voltage of large-area silicon detectors: Technology and results

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dc.contributor.authorMishra, V.
dc.contributor.authorChandratre, V. B.
dc.contributor.authorDixit, M. Y.
dc.contributor.authorShrivastava, V. D.
dc.contributor.authorTopkar, A.
dc.contributor.authorKataria, S. K.
dc.date.accessioned2021-02-11T05:04:49Z
dc.date.available2021-02-11T05:04:49Z
dc.date.issued2004
dc.description.divisionEDen
dc.format.extent4408 bytes
dc.format.mimetypetext/html
dc.identifier.sourceNuclear Instruments and Methods in Physics Research-A, 2004. Vol. 527 (3): pp. 308-318en
dc.identifier.urihttp://hdl.handle.net/123456789/22217
dc.language.isoenen
dc.subjectSilicon detectorsen
dc.subjectGetteringen
dc.titleStudies on reducing leakage current and improving breakdown voltage of large-area silicon detectors: Technology and resultsen
dc.typeArticleen

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